| PART |
Description |
Maker |
| BUK7520-55A BUK7620-55A |
TrenchMOS(tm) standard level FET
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance.
TrenchMOS TM standard level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHD22NQ20T-01 PHD22NQ20T |
N-channel TrenchMOS standard level FET
N-channel TrenchMOS standard level FET 21.1 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel TrenchMOS?? standard level FET
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| BUK7608-55_2 BUK7608-55 BUK7608-55-15 |
TrenchMOS transistor Standard level FET
From old datasheet system
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
|
NXP Semiconductors N.V.
|
| BUK7635-55A K7635-55A/T3 |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
35 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BSH114 BSH114-215 |
N-channel enhancement mode field effect transistor
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK754R0-55B BUK764R0-55B |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7609-55A |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors N.V.
|
| BUK7E2R6-60E |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7E2R3-40E |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7E3R5-60E |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
